The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Jun. 10, 2021
Applicant:

Xiamen Sanan Integrated Circuit Co., Ltd., Xiamen, CN;

Inventors:

Ning Xu, Xiamen, CN;

Wenbi Cai, Xiamen, CN;

Cheng Liu, Xiamen, CN;

Yuci Lin, Xiamen, CN;

Nientze Yeh, Xiamen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/10 (2013.01); H01L 29/0649 (2013.01); H01L 29/404 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01);
Abstract

An electrostatic discharge protection structure for a nitride-based device having an active region, an electrostatic discharge protection region outside the active region for forming the electrostatic discharge protection structure, and a field plate formed in the active region is provided. The electrostatic discharge protection structure includes a channel layer, and a barrier layer, a first p-type nitride layer and a metal layer formed on the channel layer in such order. The metal layer is electrically connected to the field plate in the active region. A nitride-based device having the electrostatic discharge protection structure and a method for manufacturing a nitride-based device is also disclosed.


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