Xiamen, China

Cheng Liu

This inventor holds 4 USPTO granted patents and 3 published patent applications. Top assignees: Hunan Sanan Semiconductor Co., Ltd., Xiamen University. Active years: 2020-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cheng Liu. Retrieved from https://idiyas.com/inventor/cheng-liu-s23x0ydn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 100.0

Average Co-Inventor Count = 7.2

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2020-2025

Loading Chart...
4 patents (USPTO):Explore Patents

Title: Cheng Liu: Innovator in Microelectronics

Introduction

Cheng Liu is a prominent inventor based in Xiamen, China. He has made significant contributions to the field of microelectronics, holding a total of 4 patents. His work focuses on semiconductor devices and electrostatic discharge protection structures, showcasing his expertise in advanced electronic technologies.

Latest Patents

One of Cheng Liu's latest patents is a semiconductor device with low potential terminals connected to wells. This microelectronic device includes a substrate, at least two doped well regions, an epitaxial structure, and at least two power elements. The doped well regions are disposed in the substrate and are spaced apart from each other. Each of the doped well regions has a doping type opposite to that of the substrate. The epitaxial structure is disposed on the substrate and is in contact with the doped well regions. The power elements are disposed on the epitaxial structure opposite to the substrate and are cascade connected with each other. A low potential terminal of each of the power elements is electrically connected to a respective one of the doped well regions. A method for making the microelectronic device is also provided.

Another notable patent is the electrostatic discharge protection structure for a nitride-based device. This structure includes an active region, an electrostatic discharge protection region outside the active region, and a field plate formed in the active region. The electrostatic discharge protection structure comprises a channel layer, a barrier layer, a first p-type nitride layer, and a metal layer formed on the channel layer in that order. The metal layer is electrically connected to the field plate in the active region. A nitride-based device having the electrostatic discharge protection structure and a method for manufacturing a nitride-based device is also disclosed.

Career Highlights

Cheng Liu has worked at notable institutions such as Xiamen University and Hunan Sanan Semiconductor Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Throughout his career, Cheng Liu has collaborated with talented individuals, including Lizong Dai and Ting Chen. These collaborations have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Cheng Liu is a distinguished inventor whose work in microelectronics has led to several important patents. His contributions

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…