Xiamen University

Hunan Sanan Semiconductor Co., Ltd.

Cheng Liu

Lizong Dai

Birong Zeng

Yiting Xu

Wenbi Cai

Conghui Yuan

Wei'ang Luo

Ting Chen

Shicheng Wang

Guorong Cehn

Yuci Lin

Kaibin He

Nien-Tze Yeh

Nientze Yeh

Jian Yang

Jie Zhao

Yuyu Liang

Ning Xu

A microelectronic device includes a substrate, at least two doped well regions, an epitaxial structure, and at least two power elements. The doped well regions are disposed in the substrate, and are spaced apart from each other. Each of the doped well regions has a doping type opposite to that of the substrate. The epitaxial structure is disposed on the substrate, and is in contact with the doped well regions. The power elements are disposed on the epitaxial structure opposite to the substrate, and are cascade connected with each other. A low potential terminal of each of the power elements is electrically connected to a respective one of the doped well regions. A method for making the microelectronic device is also provided.

Semiconductor device with low potential terminals connected to wells

An electrostatic discharge protection structure for a nitride-based device having an active region, an electrostatic discharge protection region outside the active region for forming the electrostatic discharge protection structure, and a field plate formed in the active region is provided. The electrostatic discharge protection structure includes a channel layer, and a barrier layer, a first p-type nitride layer and a metal layer formed on the channel layer in such order. The metal layer is electrically connected to the field plate in the active region. A nitride-based device having the electrostatic discharge protection structure and a method for manufacturing a nitride-based device is also disclosed.

Electrostatic discharge protection structure, nitride-based device having the same and method for manufacturing nitride-based device

Disclosed are a fluorine-silicon-containing polyphosphate ester and method for preparation thereof, having a chemical structural formula of: wherein Ris Ris n=10&#x2dc;100. The fluorine-silicon-containing polyphosphate ester of the present invention uses silicon phosphorus and fluorine for improving flame retardancy. Phosphorus catalyzes the system to form a phosphorus-rich carbon layer, performing a protective-layer function and thereby preventing further breakdown of the epoxy resin. The silicon-containing epoxy resin forms a silica-containing carbon layer during the process of combustion, strengthening the carbon-layer structure and further improving the protective function of the carbon-layer. The introduction of elemental fluorine improves the thermal stability of the epoxy resin, thereby improving the flame retardancy performance of the system.

Method for preparing fluorine-silicon-containing polyphosphate ester and flame retardant epoxy resin

Disclosed are a preparation method of a phosphorus-nitrogen-silicon-containing polymeric flame retardant and application thereof. The chemical structure of the polymeric flame retardant is wherein m=10&#x2dc;100, n=10&#x2dc;100. The synergistic flame-retardant effect between the phosphorus, nitrogen, and silicon in the phosphorus-nitrogen-silicon-containing polymeric flame retardant increases the flame retardancy of epoxy resin.

Phosphorus-nitrogen-silicon-containing polymeric flame retardant and preparation method and application thereof

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Xiamen, China

Cheng Liu