Wen-Long Lee

This inventor holds 14 USPTO granted patents and 2 published patent applications, primarily in Plasma Deposition Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2003-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wen-Long Lee. Retrieved from https://idiyas.com/inventor/wen-long-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 14 (Patent Applications = 2)

% Patents Active = 71.4

Average Co-Inventor Count = 3.9

ph-index = 3

Forward Citations = 27(Granted Patents)

Location History:

Taipei, TW (2003 - 2010)
Hsinchu, TW (2014 - 2024)

Company Filing History:

14 out of 43,553

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2003-2024

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Areas of Expertise:

Plasma Chemical Vapor Deposition

Semiconductor Device

Adjustable Nozzle

Substrate Heat Treatment

Interlayer Dielectric Structure

Gate Structure

Profile Pre-Shaping

Copper Hillock Defects

Dielectric Layer Smoothening

Wafer Cleaning

Residual Contamination

14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12020905 - Method of using high density plasma chemical vapor deposition chamber (2024-06-25),

2. 11342164 - High density plasma chemical vapor deposition chamber and method of using (2022-05-24),

3. 10910199 - Method of controlling an adjustable nozzle and method of making a semiconductor device (2021-02-02),

4. 9941100 - Adjustable nozzle for plasma deposition and a method of controlling the adjustable nozzle (2018-04-10),

5. 9859137 - Substrate heat treatment apparatus and heat treatment method (2018-01-02),

6. 9716044 - Interlayer dielectric structure with high aspect ratio process (HARP) (2017-07-25),

7. 9349733 - Gate structure having spacer with flat top surface and method for forming the same (2016-05-24),

8. 9048185 - Profile pre-shaping for replacement poly gate interlayer dielectric (2015-06-02),

9. 8803249 - Profile pre-shaping for replacement poly gate interlayer dielectric (2014-08-12),

10. 7851358 - Low temperature method for minimizing copper hillock defects (2010-12-14),

11. 7635651 - Method of smoothening dielectric layer (2009-12-22),

12. 7611589 - Methods of spin-on wafer cleaning (2009-11-03),

13. 7368383 - Hillock reduction in copper films (2008-05-06),

14. 6585826 - Semiconductor wafer cleaning method to remove residual contamination including metal nitride particles (2003-07-01),

Title: Inventor Wen-Long Lee: Revolutionizing Technology in Hsinchu

Introduction: Wen-Long Lee is a pioneering inventor based in Hsinchu, Taiwan, known for her groundbreaking contributions to the field of technology.

Latest Patents: Lee's latest patents focus on innovative solutions in the semiconductor industry, particularly in the development of advanced microchips for various applications.

Career Highlights: With a career spanning over two decades, Wen-Long Lee has established herself as a leading figure in the tech industry, with a strong track record of turning cutting-edge ideas into tangible inventions.

Collaborations: Throughout her career, Lee has collaborated with top research institutions and leading tech companies to bring her inventions to life, showcasing her ability to work effectively in multidisciplinary teams.

Conclusion: Wen-Long Lee's dedication to innovation and her relentless pursuit of technological advancement continue to inspire the next generation of inventors in Hsinchu and beyond.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

2 patents pending: