The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Dec. 16, 2011
Applicants:
Wei-ching Wu, New Taipei, TW;
Wen-long Lee, Hsinchu, TW;
Ding-i Liu, Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 16/52 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3244 (2013.01); C23C 16/45563 (2013.01); C23C 16/45589 (2013.01); C23C 16/52 (2013.01);
Abstract
The description relates to an adjustable nozzle capable of pivoting about an axis of the nozzle and translating along the axis of the nozzle. A high density plasma chemical vapor deposition (HDP CVD) chamber houses a plurality of adjustable nozzles. A feedback control system includes a control unit coupled to the adjustable nozzle and the HDP CVD chamber to form a more uniform thickness profile of films deposited on a wafer in the HDP CVD chamber.