The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Jun. 27, 2014
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Jen-Chi Chang, Hsinchu, TW;
Wen-Long Lee, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/31116 (2013.01); H01L 21/823842 (2013.01); H01L 21/823871 (2013.01); H01L 29/517 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01);
Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a first gate structure formed over a substrate. The semiconductor structure includes a first spacer formed on a sidewall of the first gate structure. In addition, a top surface of the first spacer is parallel to a top surface of the substrate.