The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
May. 30, 2014
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Chun-Cha Kuo, Taipei, TW;
Wen-Long Lee, Hsinchu, TW;
Tzu-Chien Cheng, Bade, TW;
Ding-I Liu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67109 (2013.01); H01L 21/02282 (2013.01); H01L 21/02318 (2013.01); H01L 21/28088 (2013.01); H01L 21/32139 (2013.01); H01L 21/67115 (2013.01); H01L 29/66545 (2013.01); H01L 21/28185 (2013.01); H01L 21/6715 (2013.01); H01L 21/823842 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01);
Abstract
A method for forming a semiconductor device structure and an apparatus for heating a semiconductor substrate are provided. The method includes spin coating a material layer over a semiconductor substrate. The method also includes heating the material layer by using a first heater above the semiconductor substrate and a second heater below the semiconductor substrate.