The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Mar. 04, 2005
Jun Wu, Gueishan Township, Taoyuan County, TW;
Dong-xuan LU, Miaoli Hsien, TW;
Shih-chi Lin, Taipei, TW;
Wen-long Lee, Taipei, TW;
Yi-an Jian, Banchiau, TW;
Guang-cheng Wang, Taipei, TW;
Shiu-ko Jangjian, Fenshan, TW;
Chyi-tsong NI, Taipei, TW;
Szu-an Wu, Hsinchu, TW;
Ying-lang Wang, Longjing Township, Taichung County, TW;
Jun Wu, Gueishan Township, Taoyuan County, TW;
Dong-Xuan Lu, Miaoli Hsien, TW;
Shih-Chi Lin, Taipei, TW;
Wen-Long Lee, Taipei, TW;
Yi-An Jian, Banchiau, TW;
Guang-Cheng Wang, Taipei, TW;
Shiu-Ko JangJian, Fenshan, TW;
Chyi-Tsong Ni, Taipei, TW;
Szu-An Wu, Hsinchu, TW;
Ying-Lang Wang, Longjing Township, Taichung County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for spin-on wafer cleaning. The method comprises controlling spin speed and vertical water jet pressure. The vertical jet pressure and the spin speed are substantially maintained in inverse proportion. Wafer spin speed is between 50 to 1200 rpm. Vertical wafer jet pressure is between 0.05 to 100 KPa.