IDiyas

For the Inventor, By the Inventor

Changhua County, Taiwan

Wen-Jia Hsieh

USPTO Granted Patents = 18 

Average Co-Inventor Count = 3.2

ph-index = 4

Forward Citations = 79(Granted Patents)


Location History:

  • Pusin Township, Changhua County, TW (2017)
  • Changhyua County, TW (2021)
  • Changhua County, TW (2018 - 2023)
  • Pusin Township, TW (2017 - 2024)

Company Filing History:

goldMedal18 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2017-2025

Loading Chart...
18 patents (USPTO):
1. 12191366 - Semiconductor structure with enlarged gate electrode structure and method for forming the same (2025-01-07),
2. 12015068 - Gate structure and method of fabricating the same (2024-06-18),
3. 11694924 - Semiconductor device having contact plug (2023-07-04),
4. 11296201 - Gate structure and method of fabricating the same (2022-04-05),
5. 11056384 - Method for forming contact plug (2021-07-06),
6. 11038035 - Semiconductor structure with enlarged gate electrode structure and method for forming the same (2021-06-15),
7. 10686049 - Gate structure and method of fabricating the same (2020-06-16),
8. 10475699 - Semiconductor device with contact plug (2019-11-12),
9. 10312338 - Gate structure and method of fabricating the same (2019-06-04),
10. 10262894 - FinFET device and method for forming the same (2019-04-16),
11. 10170554 - Semiconductor device and manufacturing method thereof (2019-01-01),
12. 10141416 - Semiconductor structure with enlarged gate electrode structure and method for forming the same (2018-11-27),
13. 10008574 - Gate structure and method of fabricating the same (2018-06-26),
14. 9941152 - Mechanism for forming metal gate structure (2018-04-10),
15. 9887130 - FinFET device and method of forming the same (2018-02-06),

Title: Innovations and Patents of Wen-Jia Hsieh

Introduction: Wen-Jia Hsieh is a renowned inventor based in Changhua County, Taiwan. With a remarkable portfolio of 18 patents, he has significantly contributed to the field of semiconductor technology.

Latest Patents: Wen-Jia Hsieh's latest notable inventions include a semiconductor structure with an enlarged gate electrode structure and a method for forming the same. This invention encompasses a gate stack structure situated over a substrate, characterized by a gate electrode structure with a first and second portion. The first portion has a wider top surface than the bottom surface of the second portion, illustrating an innovative approach to semiconductor design. Another significant patent features a gate structure and the method of fabricating the same. This design includes a spacer defining a gate region on a semiconductor substrate, alongside a gate dielectric layer and a unique configuration of work function metal layers.

Career Highlights: Wen-Jia Hsieh currently works at Taiwan Semiconductor Manufacturing Company Limited (TSMC), a leader in the semiconductor industry known for its advanced manufacturing technologies and innovation. His extensive experience and expertise have positioned him as a key player in the development of cutting-edge semiconductor solutions.

Collaborations: Throughout his career, Wen-Jia Hsieh has collaborated with esteemed colleagues such as Yi-Chun Lo and Bo-Wen Hsieh. Their joint efforts exemplify the spirit of teamwork and innovation within the company, pushing the boundaries of semiconductor technology.

Conclusion: Wen-Jia Hsieh's contributions to the field of semiconductor technology through his patents highlight his role as an influential inventor. His latest innovations continue to drive advancements in the industry, shaping the future of semiconductor applications.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…