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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9941152 B1

PDFFull Text
Date of Patent:
Apr. 10, 2018

Filed:

Feb. 06, 2017

Mechanism for forming metal gate structure

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd, Hsinchu, TW;

Inventors:

Wen-Jia Hsieh, Pusin Township, TW;

Chih-Lin Wang, Zhubei, TW;

Chia-Der Chang, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Stephen Bradley

Assistant Examiner:

Long H Le

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76814 (2013.01); H01L 21/02244 (2013.01); H01L 21/28088 (2013.01); H01L 21/28518 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 29/66545 (2013.01);
Abstract

Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a metal gate stack formed over the semiconductor substrate. The semiconductor device also includes an insulating layer formed over the semiconductor substrate and surrounding the metal gate stack, wherein the metal gate stack includes a metal gate electrode. The semiconductor device further includes a metal oxide structure formed over the insulating layer and in direct contact with the insulating layer. The metal oxide structure includes an oxidized material of the metal gate electrode.

Find Patent Forward Citations

Hsieh, Wen-Jia. (2018). Mechanism for forming metal gate structure (U.S. Patent No. 9941152). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9941152

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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