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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11056384 B1

PDFFull Text
Date of Patent:
Jul. 06, 2021

Filed:

Nov. 08, 2019

Method for forming contact plug

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Wen-Jia Hsieh, Changhua County, TW;

Long-Jie Hong, Hsinchu, TW;

Chih-Lin Wang, Hsinchu County, TW;

Kang-Min Kuo, Hsinchu County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Matthew E Warren

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/45 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/311 (2006.01); H01L 23/485 (2006.01); H01L 21/8238 (2006.01); H01L 29/165 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76831 (2013.01); H01L 21/02063 (2013.01); H01L 21/28518 (2013.01); H01L 21/31105 (2013.01); H01L 21/76814 (2013.01); H01L 21/823871 (2013.01); H01L 23/485 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/45 (2013.01); H01L 29/66568 (2013.01); H01L 29/66636 (2013.01); H01L 29/78 (2013.01); H01L 29/7848 (2013.01); H01L 21/76805 (2013.01); H01L 21/76855 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The semiconductor device includes a substrate, an epi-layer, a first etch stop layer, an interlayer dielectric (ILD) layer, a second etch stop layer, a protective layer, a liner, a silicide cap and a contact plug. The substrate has a first portion and a second portion. The epi-layer is disposed in the first portion. The first etch stop layer is disposed on the second portion. The ILD layer is disposed on the first etch stop layer. The second etch stop layer is disposed on the ILD layer, in which the first etch stop layer, the ILD layer and the second etch stop layer form a sidewall surrounding the first portion. The protective layer is disposed on the sidewall. The liner is disposed on the protective layer. The silicide cap is disposed on the epi-layer. The contact plug is disposed on the silicide cap and surrounded by the liner.

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