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For the Inventor, By the Inventor

Hsinchu, Taiwan

Wen Chin Lin

This inventor holds 8 USPTO granted patents. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Other. Active years: 2001-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wen Chin Lin. Retrieved from https://idiyas.com/inventor/wen-chin-lin-dxa2hmzz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 8

% Patents Active = 87.5

Average Co-Inventor Count = 2.7

ph-index = 5

Forward Citations = 86(Granted Patents)


Location History:

  • Pa Te City, Tao Yuan Hsien, TW (2001)
  • Hsih-Chu, TW (2006)
  • Hsin-Chu, TW (2005 - 2007)
  • Taipei, TW (2007)

Company Filing History:

goldMedal7 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 834,570 
Other
 patents

Years Active: 2001-2007

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8 patents (USPTO):Explore Patents
1. 7312506 - Memory cell structure (2007-12-25),
2. 7170775 - MRAM cell with reduced write current (2007-01-30),
3. 7166881 - Multi-sensing level MRAM structures (2007-01-23),
4. 7105879 - Write line design in MRAM (2006-09-12),
5. 7099176 - Non-orthogonal write line structure in MRAM (2006-08-29),
6. 7071478 - System and method for passing particles on selected areas on a wafer (2006-07-04),
7. 6873535 - Multiple width and/or thickness write line in MRAM (2005-03-29),
8. 6167631 - Plummet level (2001-01-02),

Title: The Innovations of Wen Chin Lin

Introduction

Wen Chin Lin is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 8 patents. His work focuses on enhancing the efficiency and functionality of memory cell structures.

Latest Patents

Wen Chin Lin's latest patents include a novel memory cell structure. This structure features a first conductive line cladded by at least two first ferromagnetic layers, each having a distinct easy axis. A nano oxide layer is positioned between these ferromagnetic layers, along with a first pinned ferromagnetic layer. The unique configuration of the first and second easy axes, which are 90 degrees twisted-coupled, allows for improved performance. Additionally, he has developed an MRAM cell with reduced write current. This magnetic random access memory cell includes an MRAM stack and a conductive line that carries write current. The orientation of the conductive line is angularly offset from the easy axis of the MRAM stack, enhancing its efficiency.

Career Highlights

Wen Chin Lin has worked with Taiwan Semiconductor Manufacturing Company Limited, where he has applied his innovative ideas to real-world applications. His expertise in memory technology has positioned him as a key player in the industry.

Collaborations

Throughout his career, Wen Chin Lin has collaborated with notable colleagues, including Denny Tang and Li-Shyue Lai. Their combined efforts have contributed to advancements in memory technology.

Conclusion

Wen Chin Lin's contributions to memory technology through his patents and collaborations highlight his role as an influential inventor. His innovative approaches continue to shape the future of memory cell structures and MRAM technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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