The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2006

Filed:

Apr. 20, 2004
Applicants:

Wen Chin Lin, Hsih-Chu, TW;

Denny Tang, Saratoga, CA (US);

Li-shyue Lai, Jhube, TW;

Chao-hsiung Wang, Hsinchu, TW;

Inventors:

Wen Chin Lin, Hsih-Chu, TW;

Denny Tang, Saratoga, CA (US);

Li-shyue Lai, Jhube, TW;

Chao-Hsiung Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A magnetic random access memory device (MRAM) and the method for forming the same are disclosed. The MRAM has a magnetic tunnel junction (MTJ) device, a first write line, and a second write line orthogonal to the first write line, wherein at least one of the first and second write lines has a width narrower than that of the MTJ.


Find Patent Forward Citations

Lin, Wen. (2006). Write line design in mram (U.S. Patent No. 7105879). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7105879

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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