The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2007
Filed:
Aug. 23, 2004
Applicants:
Wen Chin Lin, Hsin-Chu, TW;
Denny D. Tang, Saratoga, CA (US);
Chien-chung Hung, Taipei, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present disclosure provides an improved magnetic memory cell. The magnetic memory cell includes a switching element and two magnetic tunnel junction (MTJ) devices. A conductor connects the first and second MTJ devices in a parallel configuration, and serially connecting the parallel configuration to an electrode of the switching element. The resistance of the first MTJ device is different from the resistance of the second.
Lin, Wen. (2007). Multi-sensing level mram structures (U.S. Patent No. 7166881). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7166881
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile