The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Apr. 19, 2004
Wen Chin Lin, Hsin-Chu, TW;
Denny D. Tang, Saratoga, CA (US);
Li-shyue Lai, Jhube, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An MRAM cell including an MRAM cell stack located over a substrate and first and second write lines spanning at least one side of the MRAM cell stack and defining a projected region of intersection of the MRAM cell stack and the first and second write lines. The MRAM cell stack includes a pinned layer, a tunneling barrier layer, and a free layer, the tunneling barrier layer interposing the pinned layer and the free layer. The first write line extends in a first direction within the projected region of intersection. The second write line extends in a second direction within the projected region of intersection. The first and second directions are angularly offset by an angle ranging between 45 and 90 degrees, exclusively. At least one write line may be perpendicular to the easy axis of free layer, while the other line may be rotated off the easy axis of the free layer by an angle which is larger than zero, such as to compensate for a shifting astroid curve.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile