The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2005

Filed:

Feb. 04, 2004
Applicants:

Wen Chin Lin, Hsin-Chu, TW;

Denny Tang, Saratoga, CA (US);

Li-shyue Lai, Jhube, TW;

Chao-hsiung Wang, Hsin-Chu, TW;

Inventors:

Wen Chin Lin, Hsin-Chu, TW;

Denny Tang, Saratoga, CA (US);

Li-Shyue Lai, Jhube, TW;

Chao-Hsiung Wang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C005/08 ;
U.S. Cl.
CPC ...
Abstract

A magnetic random access memory (MRAM) cell including an MRAM cell stack located over a substrate and first and second write lines spanning opposing termini of the MRAM cell stack. At least one of the first and second write lines includes at least one first portion spanning the MRAM cell stack and at least one second portion proximate the MRAM cell stack. The first and second portions have first and second cross-sectional areas, respectively, wherein the first cross-sectional area is substantially less than the second cross-sectional area.


Find Patent Forward Citations

Lin, Wen. (2005). Multiple width and/or thickness write line in mram (U.S. Patent No. 6873535). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6873535

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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