Company Filing History:
Years Active: 2012-2020
Title: Weixiao Huang: Innovator in GaN-on-Si Switch Devices
Introduction
Weixiao Huang is a notable inventor based in Tempe, AZ (US), recognized for his contributions to semiconductor technology. With a total of 6 patents, Huang has made significant advancements in the field of GaN-on-Si switch devices.
Latest Patents
Huang's latest patents focus on low leakage current switch devices. One of his innovations includes a GaN-on-Si substrate featuring one or more device mesas. In this design, isolation regions are formed using an implant mask to implant ions into the upper portion of the mesa sidewalls and the peripheral region around each elevated surface of the mesa structures. This innovative approach prevents the subsequently formed gate electrode from contacting the peripheral edge and sidewalls of the mesa structures.
Career Highlights
Throughout his career, Weixiao Huang has worked with prominent companies in the semiconductor industry, including Freescale Semiconductor, Inc. and NXP USA, Inc. His expertise in GaN-on-Si technology has positioned him as a key player in the development of advanced switch devices.
Collaborations
Huang has collaborated with talented professionals in his field, including Vishnu Khemka and Tahir Arif Khan. These collaborations have contributed to the successful development of his innovative technologies.
Conclusion
Weixiao Huang's work in GaN-on-Si switch devices showcases his commitment to innovation in semiconductor technology. His patents and career achievements reflect his significant impact on the industry.