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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10692976 B1

PDFFull Text
Date of Patent:
Jun. 23, 2020

Filed:

Feb. 01, 2017

Gan-on-si switch devices

Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Jenn Hwa Huang, Chandler, AZ (US);

Weixiao Huang, Tempe, AZ (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:

Bruce M. Green

Primary Examiner:

Lex H Malsawma

Assistant Examiner:

Laura M Dykes

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/812 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1083 (2013.01); H01L 21/266 (2013.01); H01L 21/2654 (2013.01); H01L 21/308 (2013.01); H01L 21/30612 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 29/1037 (2013.01); H01L 29/2003 (2013.01); H01L 29/66522 (2013.01); H01L 29/66863 (2013.01); H01L 29/812 (2013.01); H01L 21/26506 (2013.01); H01L 29/517 (2013.01); H01L 29/66462 (2013.01);
Abstract

A low leakage current switch device () is provided which includes a GaN-on-Si substrate () with one or more device mesas () in which isolation regions () are formed using an implant mask () to implant ions () into an upper portion of the mesa sidewalls and the peripheral region around each elevated surface of the mesa structures exposed by the implant mask, thereby preventing the subsequently formed gate electrode () from contacting the peripheral edge and sidewalls of the mesa structures.

Find Patent Forward Citations

Huang, Jenn. (2020). Gan-on-si switch devices (U.S. Patent No. 10692976). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10692976

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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