The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Oct. 14, 2011
Bruce M. Green, Gilbert, AZ (US);
Jenn Hwa Huang, Chandler, AZ (US);
Weixiao Huang, Tempe, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
In some embodiments, a metal insulator semiconductor heterostructure field effect transistor (MISHFET) is disclosed that has a source, a drain, an insulation layer, a gate dielectric, and a gate. The source and drain are on opposing sides of a channel region of a channel layer. The channel region is an upper portion of the channel layer. The channel layer comprises gallium nitride. The insulation layer is over the channel layer and has a first portion and a second portion. The first portion is nearer the drain than the source and has a first thickness. The second portion is nearer the source than drain and has the first thickness. The insulation layer has an opening through the insulation layer. The opening is between the first portion and the second portion.