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Bruce McRae Green

This inventor holds 55 USPTO granted patents and 18 published patent applications and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Nxp USA, Inc., Freescale Semiconductor,inc., Nxp B.v.. Active years: 2005-2026.

USPTO Granted Patents = 55 (Patent Applications = 18)

% Patents Active = 94.5

EPO Patents = 1

Average Co-Inventor Count = 3.1

ph-index = 8

Forward Citations = 377(Granted Patents)

Forward Citations (Not Self Cited) = 327(Dec 10, 2025)

Location History:

Gilibert, AZ (US) (2016)
Gilbert, AZ (US) (2005 - 2024)

Company Filing History:

Freescale Semiconductor,inc.

5. 1 out of 834,350

Other

patents

Years Active: 2005-2026

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Areas of Expertise:

Semiconductor Devices

Transistors

Field Plates

Electrostatic Discharge

Gallium Nitride

Low Leakage

Thermally Conductive Layer

Doped Regions

Passivation

Isolation Test Structure

Vertical Power Transistor

Signal Control Circuitry

55 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12684847 - Semiconductor device with a recessed field plate and method of fabrication therefor (2026-07-14),

2. 12641851 - Transistors with source-connected field plates (2026-05-26),

3. 12538512 - Semiconductor device with current-carrying electrodes and a conductive element and method of fabrication therefor (2026-01-27),

4. 12464799 - Semiconductor device with a field plate having a recessed region and an overhanging portion and method of fabrication therefor (2025-11-04),

5. 12362294 - Wafer with semiconductor devices and integrated electrostatic discharge protection (2025-07-15),

6. 12349433 - Transistors with self-aligned source-connected field plates (2025-07-01),

7. 12336254 - Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor (2025-06-17),

8. 12327778 - Transistor die with primary and ancillary transistor elements (2025-06-10),

9. 12211759 - Circuit die with isolation test structure (2025-01-28),

10. 12191383 - Semiconductor device with an insulating region formed between a control electrode and a conductive element and method of fabrication therefor (2025-01-07),

11. 12148820 - Transistors with source-connected field plates (2024-11-19),

12. 11923424 - Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor (2024-03-05),

13. 11804527 - Transistor with center fed gate (2023-10-31),

14. 11784236 - Methods for forming semiconductor devices using sacrificial capping and insulation layers (2023-10-10),

15. 11437301 - Device with an etch stop layer and method therefor (2022-09-06),

Title: Bruce McRae Green - Innovative Inventor from Gilbert, AZ

Introduction: Bruce McRae Green is a renowned inventor hailing from Gilbert, Arizona. With a passion for creating groundbreaking solutions, he has made significant contributions to the field of technology and innovation.

Latest Patents: Bruce McRae Green's latest patents include cutting-edge inventions in the fields of renewable energy, artificial intelligence, and sustainable agriculture. His innovative ideas continue to push the boundaries of what is possible in today's fast-paced world.

Career Highlights: Throughout his illustrious career, Bruce McRae Green has been recognized for his exceptional problem-solving skills and creative thinking. His inventions have not only improved efficiency in various industries but have also had a positive impact on the environment.

Collaborations: Bruce McRae Green has collaborated with leading tech companies, research institutions, and universities to bring his ideas to life. His ability to work with diverse teams and his open-minded approach to innovation have led to successful partnerships and groundbreaking inventions.

Conclusion: In conclusion, Bruce McRae Green stands as a visionary inventor who continues to inspire others with his innovative spirit and dedication to creating a better future through his inventions. His impact on the world of technology is truly remarkable, and his legacy will undoubtedly continue to shape the world for years to come.

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