The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Jun. 03, 2021
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Colby Greg Rampley, Phoenix, AZ (US);

Bruce McRae Green, Gilbert, AZ (US);

David Cobb Burdeaux, Tempe, AZ (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/60 (2006.01); H01L 21/78 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H01L 23/60 (2013.01); H01L 21/78 (2013.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01);
Abstract

A wafer includes a substrate that includes a channel layer, a first active region, a second active region, and a saw street region between the first active region and the second active region. The wafer includes a first device formed on the substrate in the first active region. The first device includes a first portion of the channel layer. The wafer includes a second device formed on the substrate in the second active region. The second device includes a second portion of the channel layer. The wafer includes a conductive channel between the first active region and the second active region. The conductive channel is in the saw street of the wafer and includes a third portion of the channel layer.


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