The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Oct. 29, 2009
Bernhard H. Grote, Phoenix, AZ (US);
Vishnu K. Khemka, Phoenix, AZ (US);
Tahir A. Khan, Tempe, AZ (US);
Weixiao Huang, Tempe, AZ (US);
Ronghua Zhu, Chandler, AZ (US);
Bernhard H. Grote, Phoenix, AZ (US);
Vishnu K. Khemka, Phoenix, AZ (US);
Tahir A. Khan, Tempe, AZ (US);
Weixiao Huang, Tempe, AZ (US);
Ronghua Zhu, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Methods and apparatus are provided for fabricating a semiconductor device structure. The semiconductor device structure comprises a buried region having a first conductivity type, a first region having a second conductivity type overlying the buried region, a source region having the first conductivity type overlying the first region, and a drain region having the first conductivity type overlying the first region. The semiconductor device structure further comprises a second region having the first conductivity type overlying the buried region, the second region abutting the buried region to form an electrical contact with the buried region, and a first resistance configured electrically in series with the second region and the buried region. The combined series resistance of the first resistance and the second region is greater than a resistance of the buried region.