Tempe, AZ, United States of America

Tahir Arif Khan


Average Co-Inventor Count = 4.1

ph-index = 6

Forward Citations = 116(Granted Patents)


Location History:

  • Tempe, AZ (US) (2009 - 2015)
  • Gilbert, AZ (US) (2015)

Company Filing History:


Years Active: 2009-2015

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17 patents (USPTO):Explore Patents

Title: The Innovations of Tahir Arif Khan

Introduction

Tahir Arif Khan is a prominent inventor based in Tempe, AZ (US). He has made significant contributions to the field of semiconductor technology, holding a total of 17 patents. His work focuses on advanced manufacturing methods and device fabrication processes that enhance the performance of semiconductor devices.

Latest Patents

Among his latest patents, one notable invention is the "Manufacturing methods for laterally diffused metal oxide semiconductor devices." This patent presents fabrication processes that include a support substrate, a buried oxide layer, and multiple semiconductor regions with varying conductivity types. Another significant patent is for a "Metal oxide semiconductor field effect transistor with reduced surface field folding." This invention details the structure of a laterally diffused metal oxide semiconductor field effect transistor (LDMOSFET) that includes various contact regions and layers designed to improve device efficiency.

Career Highlights

Throughout his career, Tahir has worked with leading companies in the semiconductor industry, including Freescale Semiconductor, Inc. and Maxim Integrated Products, Inc. His expertise in semiconductor technology has positioned him as a valuable asset in these organizations.

Collaborations

Tahir has collaborated with notable professionals in his field, including Vishnu Khemka and Ronghua Zhu. These collaborations have contributed to the advancement of semiconductor technologies and innovations.

Conclusion

Tahir Arif Khan's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced semiconductor devices.

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