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For the Inventor, By the Inventor

Keelung, Taiwan

Wei-Jen Lai

USPTO Granted Patents = 20

Average Co-Inventor Count = 4.2

ph-index = 4

Forward Citations = 523(Granted Patents)


Company Filing History:

goldMedal20 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2014-2025

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20 patents (USPTO):
1. 12302611 - FinFET structure with a composite stress layer and reduced fin buckling (2025-05-13),
2. 12080800 - Semiconductor devices with modified source/drain feature and methods thereof (2024-09-03),
3. 12080759 - Transistor source/drain regions and methods of forming the same (2024-09-03),
4. 12015090 - Lightly-doped channel extensions (2024-06-18),
5. 11855207 - FinFET structure and method with reduced fin buckling (2023-12-26),
6. 11791402 - Semiconductor device having strained channels (2023-10-17),
7. 11626328 - Strain enhancement for FinFETs (2023-04-11),
8. 11489078 - Lightly-doped channel extensions (2022-11-01),
9. 11411107 - FinFET structure and method with reduced fin buckling (2022-08-09),
10. 11018061 - Strain enhancement for FinFETs (2021-05-25),
11. 10861969 - Method of forming FinFET structure with reduced Fin buckling (2020-12-08),
12. 10290550 - Strain enhancement for FinFETs (2019-05-14),
13. 10141310 - Short channel effect suppression (2018-11-27),
14. 9887100 - Methods of forming semiconductor devices and structures thereof (2018-02-06),
15. 9721829 - FinFETs with different fin height and EPI height setting (2017-08-01),

Title: Innovations of Wei-Jen Lai: Pioneering Semiconductor Technologies

Introduction: Wei-Jen Lai is a distinguished inventor based in Keelung, Taiwan, recognized for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 19 patents, Lai has been instrumental in advancing the capabilities and methodologies within this critical sector.

Latest Patents: Among his latest innovations are two notable patents. The first, titled "Semiconductor devices with modified source/drain feature and methods thereof," outlines a method for creating a semiconductor structure featuring a fin with specific semiconductor layers. This method includes steps such as forming source/drain features, depositing dielectric layers, and establishing metal contacts. The second patent, "Transistor source/drain regions and methods of forming the same," presents a device that comprises a nanostructure with adjoining source/drain regions, encompassing layers made from various semiconductor materials.

Career Highlights: Wei-Jen Lai has established himself as a key figure within Taiwan Semiconductor Manufacturing Company Ltd. His innovative approaches and methodologies have contributed to the efficiency and performance of semiconductor devices, thereby influencing advancements in technology across various applications.

Collaborations: Throughout his career, Lai has collaborated with fellow inventors and engineers such as Tsung-Lin Lee and Chih Chieh Yeh. These collaborations have likely fostered a creative and innovative environment, leading to the development of cutting-edge technologies in the semiconductor field.

Conclusion: Wei-Jen Lai's contributions to semiconductor technologies reflect his dedication to innovation and excellence. With 19 patents to his name, he continues to play a vital role in shaping the future of semiconductor devices, ensuring that technological advancement remains at the forefront of his work.

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