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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12720811 B1

PDFFull Text
Date of Patent:
Aug. 25, 2026

Filed:

Jun. 17, 2024

Lightly-doped channel extensions

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wei-Jen Lai, Keelung City, TW;

Wei-Yuan Lu, Taipei City, TW;

Chih-Hao Yu, Tainan City, TW;

Chia-Pin Lin, Hsinchu County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

HAYNES AND BOONE, LLP

Primary Examiner:

Tong-Ho Kim

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 62/13 (2025.01); H10D 62/822 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6757 (2025.01); H10D 30/026 (2025.01); H10D 30/031 (2025.01); H10D 30/6715 (2025.01); H10D 30/6735 (2025.01); H10D 30/797 (2025.01); H10D 62/116 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01); H10D 30/6741 (2025.01); H10D 62/151 (2025.01); H10D 62/822 (2025.01);
Abstract

A semiconductor structure and a method of forming the same are provided. A semiconductor structure according to the present disclosure includes a first channel member and a second channel member disposed over the first channel member, a first channel extension feature coupled to the first channel member, a second channel extension feature coupled to the second channel member, and an inner spacer feature disposed between the first channel extension feature and the second channel extension feature.

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