The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

May. 13, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tsung-Lin Lee, Hsinchu, TW;

Chih Chieh Yeh, Taipei, TW;

Feng Yuan, Hsinchu, TW;

Hung-Li Chiang, Taipei, TW;

Wei-Jen Lai, Keelung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 21/762 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); H01L 21/30604 (2013.01); H01L 21/76224 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01); H01L 29/7843 (2013.01); H01L 29/7846 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02271 (2013.01); H01L 21/02337 (2013.01); H01L 21/02348 (2013.01);
Abstract

An integrated circuit device includes a substrate having a first portion in a first device region and a second portion in a second device region. A first semiconductor strip is in the first device region. A dielectric liner has an edge contacting a sidewall of the first semiconductor strip, wherein the dielectric liner is configured to apply a compressive stress or a tensile stress to the first semiconductor strip. A Shallow Trench Isolation (STI) region is over the dielectric liner, wherein a sidewall and a bottom surface of the STI region is in contact with a sidewall and a top surface of the dielectric liner.


Find Patent Forward Citations

Loading…