The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Nov. 18, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yan-Ting Lin, Baoshan Township, TW;
Wei-Jen Lai, Keelung, TW;
Chien-I Kuo, Chiayi County, TW;
Wei-Yuan Lu, Taipei, TW;
Chia-Pin Lin, Xinpu Township, TW;
Yee-Chia Yeo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
In an embodiment, a device includes: a nanostructure; and a source/drain region adjoining a channel region of the nanostructure, the source/drain region including: a first epitaxial layer on a sidewall of the nanostructure, the first epitaxial layer including a germanium-free semiconductor material and a p-type dopant; a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including a germanium-containing semiconductor material and the p-type dopant; and a third epitaxial layer on the second epitaxial layer, the third epitaxial layer including the germanium-containing semiconductor material and the p-type dopant.