Suzhou, China

Wei He


Average Co-Inventor Count = 3.1

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Shantou, CN (2019)
  • Suzhou, CN (2020 - 2021)
  • Jiangsu, CN (2021 - 2022)

Company Filing History:


Years Active: 2019-2022

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15 patents (USPTO):Explore Patents

Title: Wei He: Innovator in Semiconductor Technology

Introduction

Wei He is a prominent inventor based in Suzhou, China. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work focuses on high electron mobility transistors (HEMT) and semiconductor devices, showcasing his expertise and innovative spirit.

Latest Patents

Wei He's latest patents include the "Integrated enhancement/depletion mode HEMT and method for manufacturing the same." This invention features an integrated enhancement/depletion mode high electron mobility transistor that consists of a substrate, a buffer layer, barrier layers, and various source, drain, and gate components. The design aims to improve the efficiency and performance of semiconductor devices. Another notable patent is the "Semiconductor device and method for manufacturing the same," which outlines a method for creating a semiconductor device by forming layers on a substrate and etching specific regions to enhance functionality.

Career Highlights

Throughout his career, Wei He has worked with Suzhou Han Hua Semiconductor Co., Ltd. His experience in the semiconductor industry has allowed him to develop innovative solutions that address the challenges faced in this rapidly evolving field.

Collaborations

Wei He has collaborated with notable coworkers, including Qian Fan and Xianfeng Ni. Their combined expertise has contributed to the advancement of semiconductor technologies and the successful development of various patents.

Conclusion

Wei He's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to pave the way for advancements in high electron mobility transistors and semiconductor devices.

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