The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2022
Filed:
Aug. 04, 2020
Suzhou Han Hua Semiconductor Co., Ltd, Jiangsu, CN;
SUZHOU HAN HUA SEMICONDUCTOR CO., LTD., Jiangsu, CN;
Abstract
An integrated enhancement/depletion mode high electron mobility transistor (HEMT) includes a substrate, a buffer layer, a first barrier layer, a second barrier layer, a first source, a first drain a first gate, a second source, a second drain, and a second gate. The buffer layer is on the substrate. The first barrier layer is on the buffer layer, and the second barrier layer is on the first barrier layer. The second barrier layer covers a portion of the first barrier layer. The first source, the first drain, and the first gate are on the first barrier layer, and the second source, the second drain, and the second gate are on the second banner layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile