The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
May. 16, 2019
Suzhou Han Hua Semiconductor Co., Ltd, Suzhou, CN;
SUZHOU HAN HUA SEMICONDUCTOR CO., LTD., Suzhou, Jiangsu, CN;
Abstract
The present invention provides an integrated enhancement/depletion mode HEMT and a method for manufacturing the same, according to which an enhancement mode transistor and a depletion mode transistor can be integrated together, which is beneficial for increasing the application of gallium nitride HEMT devices and improving the characteristics of circuits, and lay a foundation for realizing monolithic integration of high-speed digital/analog mixed signal radio frequency circuits. At the same time, by utilizing the regrowth of the buffer layer and the doping requirements, electrons generated by impurities are made part of the doping layer, thus the doping concentration is improved while preventing excessive electrons from interfering with the devices.