The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
May. 16, 2019
Suzhou Han Hua Semiconductor Co.,ltd, Suzhou, CN;
SUZHOU HAN HUA SEMICONDUCTOR CO., LTD., Suzhou, Jiangsu, CN;
Abstract
The present invention relates to a method for manufacturing a nitrogen-face polarity gallium nitride epitaxial structure, which includes: providing a gallium nitride template which includes a substrate and a first nitrogen-face polarity gallium nitride layer positioned on the substrate; re-growing the gallium nitride on a surface of the first nitrogen-face polarity gallium nitride layer to form a second nitrogen-face polarity gallium nitride layer; and sequentially growing a barrier layer and a channel layer on the second nitrogen-face polarity gallium nitride layer. The method for manufacturing the nitrogen-face polarity gallium nitride epitaxial structure provided by the present application enables a simple growth of the nitrogen-face polarity gallium nitride, can effectively eliminate the radio frequency dispersion phenomenon, and is beneficial to large-scale production and utilization of the nitrogen-face polarity gallium nitride epitaxial structure.