The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Dec. 21, 2018
Applicant:
Suzhou Han Hua Semiconductor Co.,ltd, Suzhou, CN;
Inventors:
Assignee:
SUZHOU HAN HUA SEMICONDUCTOR CO., LTD., Suzhou, CN;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/311 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/31144 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01);
Abstract
The present disclosure includes but is not limited to the III-Nitride semiconductor devices including a barrier layer, a gallium nitride or indium gallium nitride channel layer having a Ga-face coupled with the barrier layer, and a patterned thermoconductive layer having a thermal conductivity of at least 500 W/(m-K) within 1000 nanometers of a Ga-face of the gallium nitride channel layer. The semiconductor device may be a high-electron-mobility transistor or a semiconductor wafer. Methods for making the same also are described.