Venkat Ananthan

USPTO Granted Patents = 13 (Patent Applications = 2)

Average Co-Inventor Count = 2.3

ph-index = 3

Forward Citations = 28(Granted Patents)

Company Filing History:

Fairchild Semiconductor Corporation

patents

Years Active: 2014-2019

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13 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10490644 - Hybrid gate dielectrics for semiconductor power devices (2019-11-26),

2. 10002941 - Hybrid gate dielectrics for semiconductor power devices (2018-06-19),

3. 9443906 - TiOx based selector element (2016-09-13),

4. 9397141 - Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks (2016-07-19),

5. 9177998 - Method of forming an asymmetric MIMCAP or a Schottky device as a selector element for a cross-bar memory array (2015-11-03),

6. 9040465 - Dielectric doping using high productivity combinatorial methods (2015-05-26),

7. 9029187 - Using multi-layer MIMCAPs with defective barrier layers as selector element for a cross bar memory array (2015-05-12),

8. 8981335 - ZnTe on TiN or Pt electodes with a portion operable as a current limiting layer for ReRAM applications (2015-03-17),

9. 8980653 - Combinatorial optimization of interlayer parameters (2015-03-17),

10. 8933429 - Using multi-layer MIMCAPs in the tunneling regime as selector element for a cross-bar memory array (2015-01-13),

11. 8871621 - Method of forming an asymmetric MIMCAP or a schottky device as a selector element for a cross-bar memory array (2014-10-28),

12. 8766234 - Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks (2014-07-01),

13. 8716115 - High productivity combinatorial dual shadow mask design (2014-05-06),

As an AI assistant specializing in innovations, inventions, inventors, patent attorneys, assignees, and patents, I can provide you with the requested article about inventor Venkat Ananthan.

Title: Spotlight on Inventor Venkat Ananthan: Driving Innovations in Semiconductor Power Devices

Introduction:

Venkat Ananthan, a distinguished inventor based in Cupertino, CA, has left a remarkable imprint in the world of semiconductor technology with his pioneering work. With an impressive portfolio of 13 patents, his latest advancements in hybrid gate dielectrics for semiconductor power devices showcase his profound expertise and commitment to innovation.

Latest Patents:

Ananthan's latest patents revolve around enhancing the efficiency and performance of power semiconductor devices. By introducing hybrid gate dielectrics composed of distinct high-k dielectric materials, he has revolutionized the design of silicon carbide-based substrates. These innovations highlight his dedication to pushing the boundaries of semiconductor technology for optimized functionality and reliability.

Career Highlights:

Throughout his career, Venkat Ananthan has held key positions at renowned companies such as Intermolecular, Inc., and Fairchild Semiconductor Corporation. His tenure at these prestigious organizations has not only honed his skills but also provided him with valuable industry insights that have shaped his inventive endeavors.

Collaborations:

Ananthan's collaborative spirit is evidenced by his fruitful partnerships with esteemed colleagues in the field. Working alongside visionaries like Prashant B Phatak and Imran Hashim, he has fostered a culture of innovation and knowledge exchange that has led to groundbreaking developments in semiconductor power devices.

Conclusion:

In conclusion, Venkat Ananthan stands as a trailblazing inventor whose passion for driving technological advancements in semiconductor power devices has garnered him recognition and acclaim in the industry. With a rich tapestry of patents and a legacy of collaboration and innovation, he continues to inspire the next generation of inventors and engineers in shaping the future of semiconductor technology.

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