The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Sep. 19, 2012
Venkat Ananthan, Cupertino, CA (US);
Venkat Ananthan, Cupertino, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
The embodiments describe methods and apparatuses for combinatorial optimization of interlayer parameters for capacitor stacks. The capacitor stacks may include a substrate, an insulating layer disposed on the substrate, a ruthenium disposed electrode on the insulating layer, and an interlayer disposed on the ruthenium electrode, where the interlayer is configured to prevent etching of the electrode when growing a high-k dielectric using an ozone-based precursor. The parameters for forming the interlayer may include interlayer thickness, precursor chemistry, oxidant strength, precursor purge times, oxidant purge times, and other suitable parameters. Each of these parameters may be evaluated through deposition of the capacitor stacks through a combinatorial optimization process. Thus, a plurality of different parameters may be evaluated with a single substrate to ascertain associated properties of Ruthenium electrode etching in a combinatorial manner.