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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8981335 B1

PDFFull Text
Expired
Date of Patent:
Mar. 17, 2015

Filed:

Nov. 06, 2013

Znte on tin or pt electodes with a portion operable as a current limiting layer for reram applications

Applicant:

Intermolecular, Inc., San Jose, CA (US);

Inventors:

Venkat Ananthan, Cupertino, CA (US);

Prashant B. Phatak, San Jose, CA (US);

Assignee:

Intermolecular, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:

Caleb Henry

Int. Cl.
CPC ...
H01L 47/00 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 21/66 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); H01L 45/12 (2013.01); H01L 45/16 (2013.01); H01L 45/1253 (2013.01); H01L 45/144 (2013.01); H01L 45/1616 (2013.01); H01L 22/12 (2013.01); G11C 13/0002 (2013.01); G11C 13/0007 (2013.01); G11C 2013/0083 (2013.01); G11C 2213/15 (2013.01); G11C 2213/71 (2013.01); G11C 2213/77 (2013.01); H01L 2924/0002 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1266 (2013.01); H01L 45/145 (2013.01); H01L 27/2463 (2013.01);
Abstract

Resistive random access memory (ReRAM) cells can include a ZnTe switching layer and TiN or Pt electrodes. The combination of the switching layer of ZnTe and the electrodes of TiN or Pt is designed to achieve desirable performance characteristics, such as low current leakage as well as low and consistent switching currents. High temperature anneal of the ZnTe switching layer can further improve the performance of the ReRAM cells. The switching layer may be deposited using various techniques, such as sputtering or atomic layer deposition (ALD).

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Ananthan, Venkat. (2015). Znte on tin or pt electodes with a portion operable as a current limiting layer for reram applications (U.S. Patent No. 8981335). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8981335

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