Company Filing History:

16 out of 3,715

Lsi Logic Corporation

patents

5 out of 672

Mentor Graphics Corporation

Years Active: 1998-2018

Loading Chart...

22 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10013523 - Full-chip assessment of time-dependent dielectric breakdown (2018-07-03),

2. 9836569 - Leakage reduction using stress-enhancing filler cells (2017-12-05),

3. 9740804 - Chip-scale electrothermal analysis (2017-08-22),

4. 9135391 - Determination of electromigration susceptibility based on hydrostatic stress analysis (2015-09-15),

5. 7687303 - Method for determining via/contact pattern density effect in via/contact etch rate (2010-03-30),

6. 7408227 - Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide (2008-08-05),

7. 7138292 - Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide (2006-11-21),

8. 6935933 - Viscous electropolishing system (2005-08-30),

9. 6777807 - Interconnect integration (2004-08-17),

10. 6759337 - Process for etching a controllable thickness of oxide on an integrated circuit structure on a semiconductor substrate using nitrogen plasma and plasma and an rf bias applied to the substrate (2004-07-06),

11. 6524974 - FORMATION OF IMPROVED LOW DIELECTRIC CONSTANT CARBON-CONTAINING SILICON OXIDE DIELECTRIC MATERIAL BY REACTION OF CARBON-CONTAINING SILANE WITH OXIDIZING AGENT IN THE PRESENCE OF ONE OR MORE REACTION RETARDANTS (2003-02-25),

12. 6506678 - Integrated circuit structures having low k porous aluminum oxide dielectric material separating aluminum lines, and method of making same (2003-01-14),

13. 6426286 - Interconnection system with lateral barrier layer (2002-07-30),

14. 6365528 - LOW TEMPERATURE PROCESS FOR FORMING A LOW DIELECTRIC CONSTANT FLUORINE AND CARBON-CONTAINING SILICON OXIDE DIELECTRIC-MATERIAL CHARACTERIZED BY IMPROVED RESISTANCE TO OXIDATION AND GOOD GAP-FILLING CAPABILITIES (2002-04-02),

15. 6303047 - Low dielectric constant multiple carbon-containing silicon oxide dielectric material for use in integrated circuit structures, and method of making same (2001-10-16),

Title: The Innovations of Valeriy K Sukharev: A Pioneer in Semiconductor Technology

Introduction: Valeriy K Sukharev, based in Cupertino, California, is a renowned inventor with a significant portfolio of 22 patents. His innovations primarily focus on advancements in semiconductor technology, contributing to improvements in device reliability and performance.

Latest Patents: Among his most recent inventions, two notable patents stand out. The first patent, titled "Full-chip assessment of time-dependent dielectric breakdown," deals with techniques for analyzing layout designs to identify matching patterns that correspond with pre-calculated data in a database. This technology helps determine time-to-failure characteristics, allowing for the identification and rectification of patterns most susceptible to dielectric breakdown.

The second patent, called "Leakage reduction using stress-enhancing filler cells," introduces methods for inserting filler cells to minimize leakage currents in semiconductor layouts. By performing stress analysis to locate devices with high leakage, Sukharev's techniques optimize the arrangement of filler cells, significantly enhancing the efficiency and reliability of semiconductor devices.

Career Highlights: Valeriy K Sukharev has worked with leading organizations in the semiconductor industry, including LSI Logic Corporation and Mentor Graphics Corporation. His work in these companies has propelled advancements in electronic design automation and device reliability.

Collaborations: Throughout his career, Sukharev has collaborated with prominent figures in the industry, including Sheldon Aronowitz and John Haywood. These partnerships have contributed to his success and the realization of many innovative projects.

Conclusion: Valeriy K Sukharev's contributions to the field of semiconductor technology are profound. With 22 patents to his name and a focus on critical issues like dielectric breakdown and leakage reduction, his work continues to influence the design and functionality of modern electronic devices. His innovative spirit exemplifies the importance of ongoing research and development in the ever-evolving landscape of technology.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com