The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Mar. 22, 1999
Valeriy Sukharev, Cupertino, CA (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
An improvement in the formation of low dielectric constant carbon-containing silicon oxide dielectric material by reacting a carbon-substituted silane with an oxidizing agent is described, wherein the process is carried out in the presence of a reaction retardant. The reaction retardant reduces the sensitivity of the reaction to changes in pressure, temperature, and flow rates, and reduces the problem of pressure spiking, resulting in the formation of a deposited film of more uniform thickness across the substrate as well as a film with a smooth surface, and a reduction of the amount of carbon lost during the reaction. The reaction retardant is selected from the group consisting of: 1) an inorganic compound selected from the group consisting of: Cl , Br , I , HF, HCl, HBr, HI, NO, NO , N O, H S, CO, CO , NH , and SO; 2) an organic compound selected from the group consisting of: a 1-6 carbon alkane, a 1-6 carbon alkene, a 1-6 carbon alkyne, a 1-ketone, a 1-6 carbon carboxylic acid, a 1-10 carbon aromatic, any of the above organic compounds having one or more atoms therein selected from the group consisting of Cl, Br, I, S, N, and P; and 3) mixtures of 2 or more of the above.