The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2004
Filed:
Dec. 15, 1999
Sheldon Aronowitz, San Jose, CA (US);
Valeriy Sukharev, Cupertino, CA (US);
John Haywood, Santa Clara, CA (US);
James P. Kimball, San Jose, CA (US);
Helmut Puchner, Santa Clara, CA (US);
Ravindra Manohar Kapre, San Jose, CA (US);
Nicholas Eib, San Jose, CA (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
A process for etching oxide is disclosed wherein a reproducibly accurate and uniform amount of silicon oxide can be removed from a surface of an oxide previously formed over a semiconductor substrate by exposing the oxide to a nitrogen plasma in an etch chamber while applying an rf bias to a substrate support on which the substrate is supported in the etch chamber. The thickness of the oxide removed in a given period of time may be changed by changing the amount of rf bias applied to the substrate through the substrate support.