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For the Inventor, By the Inventor

Troutdale, OR, United States of America

James P Kimball

USPTO Granted Patents = 6

Average Co-Inventor Count = 3.8

ph-index = 3

Forward Citations = 313(Granted Patents)


Location History:

  • San Jose, CA (US) (2000 - 2004)
  • Troutdale, OR (US) (2005)

Company Filing History:

goldMedal6 out of 3,715 
 
Lsi Logic Corporation
 patents

Years Active: 2000-2005

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6 patents (USPTO):Explore Patents
1. 6864141 - Method of incorporating nitrogen into metal silicate based dielectrics by energized nitrogen ion beams (2005-03-08),
2. 6849512 - Thin gate dielectric for a CMOS transistor and method of fabrication thereof (2005-02-01),
3. 6759337 - Process for etching a controllable thickness of oxide on an integrated circuit structure on a semiconductor substrate using nitrogen plasma and plasma and an rf bias applied to the substrate (2004-07-06),
4. 6413881 - PROCESS FOR FORMING THIN GATE OXIDE WITH ENHANCED RELIABILITY BY NITRIDATION OF UPPER SURFACE OF GATE OF OXIDE TO FORM BARRIER OF NITROGEN ATOMS IN UPPER SURFACE REGION OF GATE OXIDE, AND RESULTING PRODUCT (2002-07-02),
5. 6331468 - Formation of integrated circuit structure using one or more silicon layers for implantation and out-diffusion in formation of defect-free source/drain regions and also for subsequent formation of silicon nitride spacers (2001-12-18),
6. 6060375 - Process for forming re-entrant geometry for gate electrode of integrated (2000-05-09),

Title: Innovative Mind: The Patents and Achievements of James P. Kimball

Introduction

James P. Kimball, a prolific inventor based in Troutdale, Oregon, has made significant contributions to the world of technology with his six patents. His work primarily revolves around enhancing semiconductor technology and improving the fabrication of thin gate dielectrics, crucial components in modern electronics.

Latest Patents

Among his latest innovations is the patent for a "Method of Incorporating Nitrogen into Metal Silicate Based Dielectrics by Energized Nitrogen Ion Beams." This method details how nitrogen can be implanted into metal silicate on a silicon substrate, potentially improving the performance of semiconductor devices. Another noteworthy patent is titled "Thin Gate Dielectric for a CMOS Transistor and Method of Fabrication Thereof." This invention outlines a procedure for implanting barrier substances into silicon substrates along with a capacitance-increasing material that enhances the performance of CMOS transistors. The process also includes oxidizing an external layer of the silicon substrate to create a silicon oxide layer, which plays a key role in semiconductor functionality.

Career Highlights

James P. Kimball has built his career at LSI Logic Corporation, where he has been integral in various innovative projects focused on semiconductor technology. His expertise in dielectrics and semiconductor fabrication has placed him at the forefront of advancements in the industry.

Collaborations

Throughout his career, Kimball has collaborated with esteemed colleagues, including Sheldon Aronowitz and Helmut Puchner. Their joint efforts have significantly impacted the development of new technologies and have paved the way for further innovations in the field.

Conclusion

James P. Kimball stands out as an influential inventor whose work continues to drive advancements in semiconductor technology. His patents not only reflect his dedication to innovation but also contribute to the ongoing evolution of electronic devices that are integral to modern life.

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