The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Oct. 30, 2002
Applicants:
Wai Lo, Lake Oswego, OR (US);
James P. Kimball, Troutdale, OR (US);
Verne C. Hornback, Camas, WA (US);
Inventors:
Wai Lo, Lake Oswego, OR (US);
James P. Kimball, Troutdale, OR (US);
Verne C. Hornback, Camas, WA (US);
Assignee:
LSI Logic Corporation, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21336 ;
U.S. Cl.
CPC ...
Abstract
A method of making a thin gate dielectric includes implanting a barrier substance into a region of a silicon substrate. A capacitance-increasing material is implanted into the silicon substrate. An outside layer of the silicon substrate is oxidized to form a first silicon oxide layer. The silicon substrate is oxidized between the first silicon oxide layer and the region.