Company Filing History:
Years Active: 2006-2011
Title: Valerie Bousquet: Innovator in Semiconductor Technology
Introduction
Valerie Bousquet is a prominent inventor based in Oxford, GB. She has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. Her work focuses on the growth and fabrication of semiconductor laser diodes and p-type nitride semiconductor materials.
Latest Patents
One of her latest patents is titled "MBE growth of a semiconductor laser diode." This invention describes a method for fabricating a continuous wave semiconductor laser diode in the (Al,Ga,In)N materials system. The process involves growing, in sequence, a first cladding region, a first optical guiding region, an active region, a second optical guiding region, and a second cladding region, all deposited by molecular beam epitaxy. Another notable patent is "MBE growth of p-type nitride semiconductor materials." This method utilizes bis(cyclopentadienyl)magnesium (Cp2Mg) as the source of magnesium dopant atoms, with ammonia gas serving as the nitrogen precursor. The growth process achieves a p-type carrier concentration of up to 2 x 1017 cm−3 without requiring any post-growth activation steps.
Career Highlights
Valerie Bousquet is currently associated with Sharp Kabushiki Kaisha Corporation, where she continues to advance her research in semiconductor technologies. Her innovative approaches have positioned her as a key figure in her field.
Collaborations
She has collaborated with notable coworkers, including Stewart Edward Hooper and Jonathan Heffernan, contributing to various projects that enhance the understanding and application of semiconductor materials.
Conclusion
Valerie Bousquet's work in semiconductor technology exemplifies her dedication to innovation and research. Her patents reflect her expertise and commitment to advancing the field, making her a significant contributor to modern technology.