The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Oct. 27, 2004
Stewart Hooper, Oxfordshire, GB;
Valerie Bousquet, Oxford, GB;
Katherine L. Johnson, Oxford, GB;
Jonathan Heffernan, Oxford, GB;
Stewart Hooper, Oxfordshire, GB;
Valerie Bousquet, Oxford, GB;
Katherine L. Johnson, Oxford, GB;
Jonathan Heffernan, Oxford, GB;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor light-emitting device fabricated in a nitride material system has an active region disposed over a substrate. The active region comprises a first aluminium-containing layer forming the lowermost layer of the active region, a second aluminium-containing layer forming the uppermost layer of the active region, and at least one InGaN quantum well layer disposed between the first aluminium-containing layer and the second aluminum-containing layer. The aluminium-containing layers provide improved carrier confinement in the active region, and so increase the output optical power of the device.