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For the Inventor, By the Inventor

Oxford, United Kingdom

Katherine L Johnson

This inventor holds 6 USPTO granted patents. Top assignee: Sharp Kabushiki Kaisha Corporation. Active years: 2007-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Katherine L Johnson. Retrieved from https://idiyas.com/inventor/katherine-l-johnson

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6

Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:

goldMedal6 out of 25,954 
 
Sharp Kabushiki Kaisha Corporation
 patents

Years Active: 2007-2011

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6 patents (USPTO):Explore Patents
1. 7867799 - MBE growth of a semiconductor laser diode (2011-01-11),
2. 7648577 - MBE growth of p-type nitride semiconductor materials (2010-01-19),
3. 7569862 - Semiconductor light-emitting device and a method of manufacture thereof (2009-08-04),
4. 7504321 - MBE growth of an algan layer or AlGaN multilayer structure (2009-03-17),
5. 7375367 - Semiconductor light-emitting device having an active region with aluminum-containing layers forming the lowermost and uppermost layer (2008-05-20),
6. 7276391 - Manufacture of a semiconductor device (2007-10-02),

Title: The Innovative Journey of Katherine L. Johnson

Introduction

Katherine L. Johnson, a prominent inventor based in Oxford, GB, has made significant contributions to the field of semiconductor technology. With a total of six patents to her name, Johnson's innovative methods have advanced the fabrication of semiconductor laser diodes and p-type nitride semiconductor materials.

Latest Patents

Among her latest patents, Johnson developed a method of fabricating a continuous wave semiconductor laser diode within the (Al, Ga, In)N materials system. This intricate process involves the sequential growth of a first cladding region, a first optical guiding region, an active region, a second optical guiding region, and a second cladding region, all achieved through molecular beam epitaxy (MBE). Johnson's second notable patent involves a method for growing p-type nitride semiconductor materials. Utilizing bis(cyclopentadienyl)magnesium as the magnesium dopant source and ammonia gas as the nitrogen precursor, this method allows for the production of p-type GaN and AlGaN, achieving a significant p-type carrier concentration without the necessity of a post-growth activator.

Career Highlights

Katherine L. Johnson's work at Sharp Kabushiki Kaisha Corporation has positioned her as a leader in semiconductor research and development. Her innovative techniques and dedication to advancing electronic technologies have garnered respect in the industry, making her a trailblazer in her field.

Collaborations

Throughout her career, Johnson has collaborated with esteemed colleagues such as Stewart Edward Hooper and Valerie Bousquet. These collaborations have further enriched her work and contributed to the successful advancement of semiconductor technology.

Conclusion

With her remarkable achievements and six patents, Katherine L. Johnson continues to inspire future generations of inventors. Her contributions to semiconductor fabrication will undoubtedly leave a lasting impact on the industry, paving the way for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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