The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2007
Filed:
Oct. 27, 2004
Stewart Hooper, Oxfordshire, GB;
Valerie Bousquet, Oxford, GB;
Katherine L. Johnson, Oxford, GB;
Jonathan Heffernan, Oxford, GB;
Stewart Hooper, Oxfordshire, GB;
Valerie Bousquet, Oxford, GB;
Katherine L. Johnson, Oxford, GB;
Jonathan Heffernan, Oxford, GB;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method of fabricating the active region of a semiconductor light-emitting device, in which the active region comprises a plurality of barrier layers () with each pair of barrier layers being separated by a quantum well layer (), comprises annealing each barrier layer () separately. Each barrier layer () is annealed once it has been grown, and before a layer is grown over the barrier layer. A device grown by the method of the invention has a significantly higher optical power output than a device made by a convention fabrication process having a single annealing step.