Oxford, United Kingdom

Stewart Edward Hooper

This inventor holds 25 USPTO granted patents and 11 published patent applications and 1 EPO patent, primarily in Semiconductor Technology. Top assignees: Sharp Kabushiki Kaisha Corporation, University of Nottingham. Active years: 1999-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Stewart Edward Hooper. Retrieved from https://idiyas.com/inventor/stewart-edward-hooper

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 

% Patents Active = 16.0

 

Average Co-Inventor Count = 3.5

ph-index = 5

Forward Citations = 60(Granted Patents)


Location History:

  • Oxon, GB (2001 - 2002)
  • Kidlington Oxon, GB (2002 - 2006)
  • Oxfordshire, GB (2007 - 2011)
  • Kidlington, GB (2009 - 2012)
  • Oxford, GB (1999 - 2018)
  • Witney, GB (2018)

Company Filing History:


Years Active: 1999-2018

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Areas of Expertise:
Semiconductor Nanoparticles
Nitride Nanocrystals
Ultraviolet Laser
Semiconductor Device
MBE Growth
Light-Emitting Device
AlInGaN
Compound Semiconductor
Layer Structure
Molecular Beam Epitaxy
Active Region
Buffer Layer
25 patents (USPTO):Explore Patents

Title: **Stewart Edward Hooper: A Pioneer in Semiconductor Nanotechnology**

Introduction

Stewart Edward Hooper is a prominent inventor based in Oxford, GB, renowned for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 25 patents, Hooper has dedicated his career to advancing the capabilities of semiconductor nanoparticles.

Latest Patents

Among his latest innovative achievements is the patent related to II-III-N semiconductor nanoparticles and the method of making them. This invention introduces nitride semiconductor nanoparticles, including nanocrystals based on a novel compound semiconductor family of the type group II-III-N. Examples of these newly developed materials include ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN, and ZnAlGaInN. Notably, this type of compound semiconductor nanocrystal was unknown prior to Hooper's work. The invention also articulates the development of II-N semiconductor nanocrystals, such as ZnN nanocrystals, which represent a subgroup of the group II-III-N semiconductor nanocrystals. Hooper's patent emphasizes the ability to control the composition and size of these nanocrystals, thereby tailoring their band-gap and light emission properties. The efficient light emission across the ultraviolet-visible-infrared wavelength range showcases the practical applications of his work in optoelectronic devices, including solar cells, light-emitting diodes, laser diodes, and phosphor materials for LED displays.

Career Highlights

Hooper has held pivotal roles in esteemed organizations such as Sharp Kabushiki Kaisha Corporation and The University of Nottingham. His career has been marked by a commitment to research and application in semiconductor technology, enhancing the efficiency and effectiveness of various electronic devices through innovation.

Collaborations

Throughout his illustrious career, Stewart Edward Hooper has collaborated with notable individuals like Jonathan Heffernan and Valerie Bousquet. These partnerships have facilitated groundbreaking advancements in the field of semiconductor nanotechnology, evidencing the power of teamwork in research and development.

Conclusion

Stewart Edward Hooper stands as a distinguished figure in the realm of semiconductor inventions, showcasing an impressive track record of innovation through his numerous patents. His latest work on semiconductor nanoparticles not only contributes to the scientific community but also presents promising prospects for the future of optoelectronic applications. As he continues to push the boundaries of technology, Hooper's legacy as an inventor remains influential in shaping the landscape of semiconductor research.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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