The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2010
Filed:
Nov. 27, 2003
Stewart E. Hooper, Oxfordshire, GB;
Katherine L. Johnson, Oxford, GB;
Valerie Bousquet, Oxford, GB;
Jonathan Heffernan, Oxford, GB;
Stewart E. Hooper, Oxfordshire, GB;
Katherine L. Johnson, Oxford, GB;
Valerie Bousquet, Oxford, GB;
Jonathan Heffernan, Oxford, GB;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method of growing a p-type nitride semiconductor material by molecular beam epitaxy (MBE) uses bis(cyclopentadienyl)magnesium (Cp2Mg) as the source of magnesium dopant atoms. Ammonia gas is used as the nitrogen precursor for the MBE growth process. To grow p-type GaN, for example, by the method of the invention, gallium, ammonia and Cp2Mg are supplied to an MBE growth chamber; to grow p-type AlGaN, aluminum is additionally supplied to the growth chamber. The growth process of the invention produces a p-type carrier concentration, as measured by room temperature Hall effect measurements, of up to 2 1017 cm−3, without the need for any post-growth step of activating the dopant atoms.