The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Aug. 18, 2003
Valerie Bousquet, Oxford, GB;
Stewart Edward Hooper, Kidlington, GB;
Jennifer Mary Barnes, Headington, GB;
Jonathan Heffernan, Oxford, GB;
Valerie Bousquet, Oxford, GB;
Stewart Edward Hooper, Kidlington, GB;
Jennifer Mary Barnes, Headington, GB;
Jonathan Heffernan, Oxford, GB;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method of MBE growth of a semiconductor layer structure comprises growing a first (Al,Ga)N layer (step) over a substrate at the first substrate temperature (T) using ammonia as the nitrogen precursor. The substrate is then cooled (step) to a second-substrate temperature (T) which is lower than the first substrate temperature. An (In,Ga)N quantum well structure is then grown (step) over the first (Al,Ga)N layer by MBE using ammonia as the nitrogen precursor. The supply of ammonia to the substrate is maintained continuously during the first growth step, the cooling step, and the second growth step. After completion of the growth of the (In,Ga)N quantum well structure, the substrate may be heated to a third temperature (T) which is greater than the second substrate temperature (T). A second (Al,Ga)N layer is then grown over the (In,Ga)N quantum well structure (step).
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