The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Oct. 27, 2004
Stewart Hooper, Oxfordshire, GB;
Valerie Bousquet, Oxford, GB;
Katherine L. Johnson, Oxford, GB;
Matthias Kauer, Oxford, DE;
Jonathan Heffernan, Oxford, GB;
Stewart Hooper, Oxfordshire, GB;
Valerie Bousquet, Oxford, GB;
Katherine L. Johnson, Oxford, GB;
Matthias Kauer, Oxford, DE;
Jonathan Heffernan, Oxford, GB;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method of fabricating a continuous wave semiconductor laser diode in the (Al,Ga,In)N materials system comprises: growing, in sequence, a first cladding region (), a first optical guiding region (), an active region (), a second optical guiding region () and a second cladding region (). Each of the first cladding region (), the first optical guiding region (), the active region (), the second optical guiding region () and the second cladding region () is deposited by molecular beam epitaxy.