The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Jan. 07, 2005
Katherine L. Johnson, Oxford, GB;
Stewart Hooper, Oxfordshire, GB;
Valerie Bousquet, Oxford, GB;
Matthias Kauer, Oxford, GB;
Jonathan Heffernan, Oxford, GB;
Katherine L. Johnson, Oxford, GB;
Stewart Hooper, Oxfordshire, GB;
Valerie Bousquet, Oxford, GB;
Matthias Kauer, Oxford, GB;
Jonathan Heffernan, Oxford, GB;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method of manufacturing a semiconductor light-emitting device comprises selectively etching a semiconductor layer structure () fabricated in a nitride materials system and including an aluminum-containing cladding region or an aluminum-containing optical guiding region (). The etching step forms a mesa (), and also exposes one or more portions of the aluminum-containing cladding region or the aluminum-containing optical guiding region (). The or each exposed portion of the aluminum-containing cladding region or the aluminum-containing optical guiding region () is then oxidized to form a current blocking layer () laterally adjacent to and extending laterally from the mesa. When an electrically conductive contact layer () is deposited, the current blocking layer () will prevent the contact layer () from making direct contact with the buffer layer ().