The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Jan. 15, 2009
Katherine Louise Smith, Oxford, GB;
Mathieu Xavier Sénès, Oxford, GB;
Tim Michael Smeeton, Oxford, GB;
Stewart Edward Hooper, Oxford, GB;
Katherine Louise Smith, Oxford, GB;
Mathieu Xavier Sénès, Oxford, GB;
Tim Michael Smeeton, Oxford, GB;
Stewart Edward Hooper, Oxford, GB;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor light-emitting device fabricated in the (Al,Ga,In)N materials system has an active region for light emission () comprising InGaN quantum dots or InGaN quantum wires. An AlGaN layer () is provided on a substrate side of the active region. This increases the optical output of the light-emitting device. This increased optical output is believed to result from the AlGaN layer serving, in use, to promote the injection of carriers into the active region.